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1. Identity statement
Reference TypeConference Paper (Conference Proceedings)
Sitemtc-m21b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34P/3JDEM78
Repositorysid.inpe.br/mtc-m21b/2015/04.29.19.04
Metadata Repositorysid.inpe.br/mtc-m21b/2015/04.29.19.04.13
Metadata Last Update2018:06.04.02.55.23 (UTC) administrator
Secondary KeyINPE--PRE/
Citation KeyRamirezRamosCoraTrav:2015:ChPuPE
TitleCharacterization of a Pulsed-DC PECVD System with Active Screen for DLC Films Growth
Year2015
Access Date2024, May 28
Secondary TypePRE CI
2. Context
Author1 Ramirez Ramos, Marco Antonio
2 Corat, Evaldo José
3 Trava-Airoldi, Vladimir Jesus
Resume Identifier1
2 8JMKD3MGP5W/3C9JH33
Group1 LAS-CTE-INPE-MCTI-GOV-BR
2 LAS-CTE-INPE-MCTI-GOV-BR
3 LAS-CTE-INPE-MCTI-GOV-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1 marco.ramirez@las.inpe.br
2 corat@las.inpe.br
3 vladimir@las.inpe.br
Conference NameThe International Conference on Metallurgical Coatings and Thin Films, 42 (ICMCTF).
Conference LocationSan Diego, California
Date20-24 apr.
History (UTC)2015-04-29 19:04:13 :: simone -> administrator ::
2018-06-04 02:55:23 :: administrator -> simone :: 2015
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
AbstractActive Screen technique, as an additional cathode, is an advanced technology used for metal surface plasma nitrating with apparent advantages over conventional one. Side effects such as arcing or other way of plasma instability could be considerably reduced with the use of the active screen technique and thus dealing to an improved surface quality. Because of the absence of information concerning the active screen technique used for DLC growth, specially on different kinds of steels a new and deeper studies about the process will be considered.[1] Active screen coupled to PECVD system allows obtaining DLC films with lower pressure, lower temperature and low power energy consumption, achieving an inferior production costs with higher adhesion and better quality films in terms of hardness, density and finishing [2]. Also, the homogeneity of the coating in large area is improved [3]. In this work cylindrical actives screens are home manufactured with the same diameter and different mesh sizes. The temperature variation on ss 420 substrate as a function of the time in argon plasma discharge, gas pressure inside of the chamber and screen mesh sizes were carefully measured. Keeping constant the bias and gas flow, a very interesting results show that the temperature rise faster for higher screen mesh even at very low argon pressure in the plasma discharge and the threshold mesh size and lower pressure value was found. Also a strong dependence of the final temperature with the gas pressure reveal the possibilities of obtaining a better conditions for DLC growth than in the conventional PECVD system. In order to show a great performance of this new system a very good DLC films were obtained with good mechanical, trybological and chemical properties. References [1] C.X. Li, J. Georges, X.Y. Li, Surf. Eng. 18 (2002) 453458. [2] C.X. Li, T. Bell, H. Dong, Surf. Eng. 18 (2002) 174181. [3] S. Corujeira Gallo, H. Dong, Vacuum 84 (2009) 321325.
AreaFISMAT
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Languageen
User Groupsimone
Reader Groupadministrator
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Visibilityshown
Read Permissionallow from all
Update Permissionnot transferred
5. Allied materials
Mirror Repositoryurlib.net/www/2011/03.29.20.55
Next Higher Units8JMKD3MGPCW/3ESR3H2
Citing Item List
Host Collectionsid.inpe.br/mtc-m21b/2013/09.26.14.25.20
6. Notes
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